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| AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18m (VGS = -10V) RDS(ON) < 36m (VGS = -5V) SOIC-8 Top View S S S G D D D D G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS 25 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG -10 -8 -80 3.1 2.0 -55 to 150 -8 -6 1.7 1.1 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t 10s Steady State Steady State RJA RJL Typ 32 60 17 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS = -5V, ID = -5A Forward Transconductance VDS = -5V, ID = -10A Diode Forward Voltage IS = -1A,VGS = 0V Maximum Body-Diode Continuous Current Conditions ID = -250A, VGS = 0V VDS = -30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 25V VDS = VGS ID = -250A VGS = -10V, VDS = -5V VGS = -10V, ID = -10A TJ=125C -1.7 -80 15 22 27 22 -0.74 -1 -3.5 1130 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 240 155 5.8 18 VGS=-10V, VDS=-15V, ID=-10A 9.5 5.5 3.3 8.7 VGS=-10V, VDS=-15V, RL=1.5, RGEN=3 IF=-10A, dI/dt=100A/s 8.5 18 7 25 12 30 nC nC ns ns ns ns ns nC 8 24 1400 18 27 36 S V A pF pF pF nC m -2.3 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev0: Aug. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 -10V 60 -ID (A) -8V -6V -ID(A) 60 80 VDS= -5V 40 -4.5V 20 VGS= -4V 40 125C 20 25C 0 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 40 Normalized On-Resistance VGS=-5V 30 0 1 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 1.4 1.2 1.0 0.8 0.6 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 125C VGS=-5V ID=-5A VGS=-10V ID=-10A RDS(ON) (m) 20 VGS=-10V 10 0 5 10 IF=-6.5A, dI/dt=100A/s 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 45 40 35 RDS(ON) (m) 125C -IS (A) 30 ID=-10A 1E-02 25C 1E-03 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 25C 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-10A 2000 Capacitance (pF) 1500 Ciss 1000 Coss 500 Crss 0 5 10 15 20 25 30 0 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 RDS(ON) limited 100 -ID (Amps) 10 1 0.1 0.01 0.1 1 TJ(Max)=150C TA=25C 10s 1000 TJ(Max)=150C TA=25C 1ms 10ms 100ms 10s DC Power (W) 100s 100 10 IF=-6.5A, dI/dt=100A/s 10 100 -VDS (Volts) 1 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) 0.001 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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